Kawasaki, Japan

Yoshihisa Ooaeh


Average Co-Inventor Count = 4.4

ph-index = 8

Forward Citations = 169(Granted Patents)


Company Filing History:


Years Active: 1998-2002

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13 patents (USPTO):Explore Patents

Title: Innovations of Yoshihisa Ooaeh

Introduction

Yoshihisa Ooaeh is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of charged-particle beam technology, holding a total of 13 patents. His work has been instrumental in advancing methods and devices used in semiconductor manufacturing.

Latest Patents

One of Yoshihisa Ooaeh's latest patents is a charged-particle-beam exposure device and method. This innovative method involves exposing a wafer to a charged-particle beam that is directed by a deflector. The process includes arranging multiple first marks at varying heights and focusing the charged-particle beam on each mark using a focus coil positioned above the deflector. The method also entails obtaining focus distances for each mark and calculating deflection-efficiency-correction coefficients. This approach allows for precise adjustments based on focus distance, enhancing the accuracy of the exposure process.

Career Highlights

Yoshihisa Ooaeh has built a successful career at Fujitsu Corporation, where he has been able to apply his expertise in charged-particle beam technology. His innovative contributions have not only advanced the company's technological capabilities but have also had a lasting impact on the industry as a whole.

Collaborations

Throughout his career, Yoshihisa Ooaeh has collaborated with notable colleagues, including Hiroshi Yasuda and Tomohiko Abe. These partnerships have fostered a creative environment that has led to groundbreaking advancements in their field.

Conclusion

Yoshihisa Ooaeh's work exemplifies the spirit of innovation in the realm of charged-particle beam technology. His patents and contributions continue to influence the semiconductor industry, showcasing the importance of inventive minds in driving technological progress.

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