Osaka, Japan

Yoshihiko Horikawa


Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 1998-1999

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2 patents (USPTO):Explore Patents

Title: Innovations by Yoshihiko Horikawa

Introduction

Yoshihiko Horikawa is a notable inventor based in Osaka, Japan. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his expertise and innovative spirit.

Latest Patents

Horikawa's latest patents include a "Method of manufacturing a semiconductor apparatus" and a "Method of manufacturing a bipolar transistor." Both patents focus on enhancing the performance and reliability of PNP bipolar transistors in semiconductor devices. The first patent describes the formation of an oxide insulating layer in a P-type semiconductor substrate, which is crucial for preventing leakage currents. The second patent elaborates on similar techniques to improve the efficiency of bipolar transistors, ensuring high voltage resistance and optimal functionality.

Career Highlights

Yoshihiko Horikawa is associated with Matsushita Electric Industrial Co., Ltd., a leading company in the electronics industry. His work has contributed to advancements in semiconductor manufacturing processes, which are essential for modern electronic devices.

Collaborations

Horikawa has collaborated with notable coworkers, including Takehiro Hirai and Mitsuo Tanaka. Their combined efforts have furthered research and development in semiconductor technologies.

Conclusion

Yoshihiko Horikawa's innovative patents and contributions to semiconductor technology highlight his role as a key figure in the industry. His work continues to influence advancements in electronic devices and manufacturing processes.

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