This inventor holds 1 USPTO granted patent. Top assignee: Matsushita Electric Industrial Co., Ltd.. Active years: 2006.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2006
Title: Innovations of Yoshifumi Hata in Semiconductor Technology
Introduction
Yoshifumi Hata is a notable inventor based in Joyo, Japan. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method for fabricating semiconductor devices.
Latest Patents
Hata holds 1 patent for his invention titled "Method for fabricating semiconductor device." This patent describes a process where a nonmetal element is distributed in a region near the surface of a semiconductor layer. Following this, a metal film is deposited on the semiconductor layer. The process continues with the epitaxial growth of a semiconductor-metal compound layer in the surface portion of the semiconductor layer. This is achieved by inducing a reaction between an element in the semiconductor layer and a metal in the metal film through annealing.
Career Highlights
Yoshifumi Hata is associated with Matsushita Electric Industrial Co., Ltd., a company known for its advancements in electronics and technology. His work has contributed to the company's reputation for innovation in semiconductor devices.
Collaborations
Hata has collaborated with notable coworkers such as Shin Hashimoto and Takenobu Kishida. Their combined expertise has furthered advancements in semiconductor technology.
Conclusion
Yoshifumi Hata's contributions to semiconductor technology through his innovative patent demonstrate his significant role in the field. His work continues to influence advancements in electronics and semiconductor fabrication.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile