Company Filing History:
Years Active: 2025
Title: Yinghao Ma: Innovator in Phase-Change Memory Technology
Introduction
Yinghao Ma is a prominent inventor based in Hubei, China. He has made significant contributions to the field of electronics, particularly in the development of advanced circuits for memory technology. His innovative work has led to the creation of a patent that addresses critical challenges in phase-change memory devices.
Latest Patents
Yinghao Ma holds a patent for a "High-speed and large-current adjustable pulse circuit, operating circuit and operating method of phase-change memory." This invention provides a high-speed and large-current adjustable pulse circuit, along with an operating circuit and method for phase-change memory. The design includes a clamping structure, a current mirror structure, and a leakage current shutdown structure. The clamping structure, which consists of a clamping operational amplifier and a first MOS transistor, is configured to generate a reference current. The current mirror structure generates an output current proportional to the reference current. Additionally, the leakage current shutdown structure is designed to turn off the current mirror structure and reduce leakage current when the pulse disappears. This innovation results in a device with adjustable current and reduced leakage current.
Career Highlights
Yinghao Ma is affiliated with Huazhong University of Science and Technology, where he continues to advance his research and development efforts. His work has garnered attention for its practical applications in improving memory technology, which is crucial for various electronic devices.
Collaborations
Yinghao Ma has collaborated with notable colleagues, including Xingsheng Wang and Fan Yang. Their combined expertise has contributed to the success of their projects and innovations in the field.
Conclusion
Yinghao Ma's contributions to the field of phase-change memory technology exemplify the impact of innovative thinking in electronics. His patent reflects a significant advancement in circuit design, showcasing his commitment to enhancing memory device performance.