Ying-Shen Kuo

Title: Ying-Shen Kuo: Innovator in Hafnium Oxide Deposition

Introduction

Ying-Shen Kuo is a notable inventor based in Chandler, AZ (US). He has made significant contributions to the field of materials science, particularly in the deposition of hafnium oxide. His innovative methods have implications for various applications in semiconductor technology.

Latest Patents

Ying-Shen Kuo holds a patent for the "Deposition of hafnium oxide within a high aspect ratio hole." This patent describes methods for forming hafnium oxide within three-dimensional structures, such as high aspect ratio holes. The process involves depositing a first hafnium-containing material, like hafnium nitride or hafnium carbide, and converting it to hafnium oxide by exposing it to an oxygen reactant. This method ensures that the three-dimensional structure is filled with hafnium oxide, substantially free of voids or seams, enhancing the material's integrity.

Career Highlights

Ying-Shen Kuo is associated with Asm IP Holding B.V., where he continues to advance his research and development efforts. His work has led to innovative solutions that address challenges in the deposition processes used in modern technology.

Collaborations

Ying-Shen Kuo has collaborated with notable colleagues, including Jiyeon Kim and Petri Raisanen. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Ying-Shen Kuo's contributions to the field of hafnium oxide deposition exemplify the impact of innovative thinking in technology. His work not only advances material science but also paves the way for future developments in semiconductor applications.