Yin-Lan Chang

Title: Innovations of Yin-Lan Chang in Semiconductor Technology

Introduction

Yin-Lan Chang is a notable inventor based in Cupertino, California. She has made significant contributions to the field of semiconductor technology, particularly through her innovative patent. Her work focuses on enhancing the efficiency of tunnel-junction structures, which are crucial in various electronic applications.

Latest Patents

Yin-Lan Chang holds a patent for "Material systems for semiconductor tunnel-junction structures." This patent describes a tunnel junction structure that includes a p-type tunnel junction layer made of a first semiconductor material and an n-type tunnel junction layer made of a second semiconductor material. The design incorporates materials that contain gallium (Ga), arsenic (As), and either nitrogen (N) or antimony (Sb). This innovative approach significantly increases the probability of tunneling and reduces the voltage drop across the tunnel junction, thereby improving overall performance.

Career Highlights

Yin-Lan Chang is currently employed at Agilent Technologies, Inc., where she continues to advance her research in semiconductor materials. Her expertise and innovative mindset have positioned her as a valuable asset in her field.

Collaborations

Throughout her career, Yin-Lan has collaborated with esteemed colleagues such as Ashish Tandon and Michael H. Leary. These partnerships have fostered a dynamic environment for innovation and development in semiconductor technology.

Conclusion

Yin-Lan Chang's contributions to semiconductor technology through her patent and work at Agilent Technologies, Inc. highlight her role as a leading inventor in her field. Her innovative approaches continue to pave the way for advancements in electronic applications.