Taean, South Korea

Yi Yeon Kim

This inventor holds 1 USPTO granted patent. Top assignee: Sungkyunkwan University. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yi Yeon Kim. Retrieved from https://idiyas.com/inventor/yi-yeon-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Yi Yeon Kim: Innovator in Graphene Technology

Introduction

Yi Yeon Kim is a prominent inventor based in Taean-gun, South Korea. He has made significant contributions to the field of materials science, particularly in the area of graphene technology. His innovative work has led to the development of a unique method for etching atomic layers of graphene.

Latest Patents

Yi Yeon Kim holds a patent for a "Method for etching atomic layer of graphene." This patent describes an atomic layer etching method that involves adsorbing reactive radicals onto the surface of graphene and subsequently irradiating an energy source to the graphene where the reactive radicals are adsorbed. This innovative approach has the potential to enhance the fabrication processes in various applications involving graphene.

Career Highlights

Yi Yeon Kim is affiliated with Sungkyunkwan University, where he continues to engage in cutting-edge research. His work has garnered attention in the scientific community, contributing to advancements in nanotechnology and materials engineering.

Collaborations

He has collaborated with notable colleagues, including Geun Young Yeom and Woong Sun Lim, to further explore the applications and implications of his research in graphene technology.

Conclusion

Yi Yeon Kim's contributions to the field of graphene etching represent a significant advancement in materials science. His innovative methods and collaborative efforts continue to push the boundaries of technology and research.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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