Yeong-Ruey Shiue

Title: Yeong-Ruey Shiue: Innovator in Semiconductor Technology

Introduction

Yeong-Ruey Shiue is a notable inventor based in Hsin Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for forming barrier layers and metal plugs.

Latest Patents

Yeong-Ruey Shiue holds 2 patents. His latest patents include a method of forming a TiN/W barrier layer for a hot Al plug. This invention relates to a method of forming a barrier metal layer that prevents aluminum used as an interconnection layer from diffusing into a silicon substrate. The barrier metal layer consists of a stacked structure with a top layer of Tungsten (W) formed by a Chemical Vapor Deposition (CVD) method and a bottom layer of TiN. This innovative approach results in a plug structure that offers low manufacturing costs and effectively prevents aluminum diffusion. Another patent is a method for forming a metal plug, which involves several steps including forming a metal contact window, creating a barrier layer, and employing chemical mechanical polishing and etching methods.

Career Highlights

Yeong-Ruey Shiue is currently employed at Mosel Vitelic Corporation, where he continues to advance semiconductor technologies. His work has been instrumental in enhancing the performance and reliability of semiconductor devices.

Collaborations

Some of his notable coworkers include Pei-Jan Wang and Hsi-Chieh Chen, who have collaborated with him on various projects within the semiconductor field.

Conclusion

Yeong-Ruey Shiue's contributions to semiconductor technology through his innovative patents and collaborative efforts highlight his importance in the industry. His work continues to influence advancements in the field, ensuring better performance and reliability in semiconductor devices.