Itami, Japan

Yasuzi Nagayama


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 33(Granted Patents)


Company Filing History:


Years Active: 1981

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1 patent (USPTO):Explore Patents

Title: Yasuzi Nagayama: Innovator in Substrate Bias Generation

Introduction

Yasuzi Nagayama is a notable inventor based in Itami, Japan. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs and patents. His work has implications for various applications in electronics and materials science.

Latest Patents

Nagayama holds a patent for a substrate bias generator. This invention comprises a capacitor that includes an electrically insulating film sandwiched between two electrodes. One of these electrodes is disposed on one main face of a p.sup.- semiconductor substrate through another electrically insulating film. The design features a first, second, and third N.sup.+ semiconductor region arranged in a spaced relationship on the same main face. The first and second regions form a grounded source and a drain of an MOSFET, which is connected to both its gate and one of the capacitor's electrodes. The second and third regions form a source and a drain of another MOSFET, connected to both its gate and the other main face of the substrate. A signal is applied to the other electrode of the capacitor, showcasing the complexity and utility of his invention.

Career Highlights

Nagayama is associated with Mitsubishi Denki Kabushiki Kaisha, a prominent company in the electronics sector. His role there has allowed him to work on cutting-edge technologies and contribute to advancements in semiconductor devices. His patent reflects his expertise and innovative thinking in this specialized field.

Collaborations

Throughout his career, Nagayama has collaborated with talented individuals such as Kazuhiro Shimotori and Takao Nakano. These collaborations have likely enriched his work and contributed to the development of his patented technologies.

Conclusion

Yasuzi Nagayama is a distinguished inventor whose work in substrate bias generation has made a significant impact in the field of semiconductor technology. His contributions continue to influence advancements in electronics, showcasing the importance of innovation in this rapidly evolving industry.

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