Kagoshima, Japan

Yasuyuki Fukushima


Average Co-Inventor Count = 2.4

ph-index = 1

Forward Citations = 4(Granted Patents)


Location History:

  • Osaka, JP (2008)
  • Kagoshima, JP (2013)

Company Filing History:


Years Active: 2008-2013

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2 patents (USPTO):Explore Patents

Title: Yasuyuki Fukushima: Innovator in Nitride Semiconductor Technology

Introduction

Yasuyuki Fukushima is a prominent inventor based in Kagoshima, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of nitride semiconductor devices. With a total of 2 patents to his name, Fukushima's work has garnered attention in the industry.

Latest Patents

Fukushima's latest patents include innovative designs for nitride semiconductor devices. The first patent describes a nitride semiconductor device that features a first nitride semiconductor layer with a C-plane as a growth surface, characterized by unevenness in its upper surface. A second nitride semiconductor layer is formed on this first layer, ensuring contact with the unevenness and exhibiting p-type conductivity. Notably, the second layer, located directly on the sidewall of the unevenness, has a p-type carrier concentration of 1×10 or more.

The second patent outlines a nitride semiconductor device comprising a well layer of nitride semiconductor containing indium (In) and gallium (Ga). This device includes barrier layers of nitride semiconductor that sandwich the well layer, containing aluminum (Al) and gallium (Ga), and possessing a larger band gap energy than the well layer. A thin film layer is strategically placed between the well layer and the barrier layer, formed during temperature adjustments after the formation of the barrier or well layers.

Career Highlights

Fukushima is currently employed at Panasonic Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of nitride semiconductor devices, which are crucial for various electronic applications.

Collaborations

Fukushima has collaborated with notable colleagues, including Norio Ikedo and Masaaki Yuri. Their combined expertise has contributed to the successful development of innovative semiconductor technologies.

Conclusion

Yasuyuki Fukushima's contributions to nitride semiconductor technology highlight his role as a leading inventor in the field. His patents reflect a commitment to innovation and excellence, paving the way for future advancements in semiconductor devices.

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