Yasunari Noguchi

Title: Yasunari Noguchi: Innovator in Semiconductor Technology

Introduction

Yasunari Noguchi is a prominent inventor based in Gunma, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on enhancing the performance and reliability of insulated-gate semiconductor devices.

Latest Patents

Among his latest patents is an insulated-gate semiconductor device with a protection diode. This innovation features channel regions that are continuous with transistor cells, which are also located beneath a gate pad electrode. The channel region under the gate pad electrode is fixed to a source potential, ensuring a predetermined reverse breakdown voltage between the drain and source without the need for a p+ type impurity region beneath the entire lower surface of the gate pad electrode. Additionally, a protection diode is formed in a conductive layer at the outer periphery of the operation region. Another notable patent involves insulated-gate semiconductor devices and PN junction diodes, which share similar structural innovations to enhance device performance.

Career Highlights

Yasunari Noguchi has worked with notable companies such as Sanyo Electric Co., Ltd. and Sanyo Semiconductor Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Throughout his career, Yasunari has collaborated with esteemed colleagues, including Hiroyasu Ishida and Eio Onodera. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Yasunari Noguchi's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced electronic devices.