Yasuhiko Nomura

Title: Yasuhiko Nomura: Innovator in Semiconductor Technology

Introduction

Yasuhiko Nomura is a prominent inventor based in Ibaraki, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the growth of compound semiconductors. With a total of 2 patents, his work has advanced the methods used in the semiconductor industry.

Latest Patents

Nomura's latest patents include a method of growing a crystal of a compound semiconductor at a low temperature. This innovative method involves selectively growing a crystal layer composed of gallium and arsenic. The process utilizes a combination of metallic gallium and a reactive gas, such as trisdimethylminoarsine, to achieve selective deposition on a substrate. This technique allows for the compound semiconductor layer to be deposited only on exposed portions of the substrate, which may consist of materials like GaAs, AlGaAs, or InGaAs. Another notable patent describes a semiconductor crystal growing method on a p-type GaAs substrate, where a mesa groove is formed to facilitate the growth of n-type and p-type GaAs layers.

Career Highlights

Yasuhiko Nomura is associated with Optoelectronics Technology Research Corporation, where he has been instrumental in advancing semiconductor technologies. His expertise in the field has led to innovative solutions that enhance the efficiency and effectiveness of semiconductor manufacturing processes.

Collaborations

Nomura has collaborated with notable colleagues, including Shigeo Goto and Yoshitaka Morishita. These partnerships have contributed to the development of cutting-edge technologies in the semiconductor sector.

Conclusion

Yasuhiko Nomura's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His innovative methods continue to shape the future of compound semiconductor growth.