Austin, TX, United States of America

Yaojun Zhang

USPTO Granted Patents = 6 

Average Co-Inventor Count = 2.6

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2018-2024

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6 patents (USPTO):Explore Patents

Title: Yaojun Zhang: Innovator in Magnetoresistive Technology

Introduction

Yaojun Zhang is a prominent inventor based in Austin, TX, known for his significant contributions to the field of magnetoresistive devices. With a total of six patents to his name, Zhang has made remarkable advancements in the technology that underpins modern memory storage solutions.

Latest Patents

One of Zhang's latest patents is titled "Midpoint sensing reference generation for STT-MRAM." This invention focuses on a magnetoresistive device that includes an array of memory cells arranged in rows and columns. Each memory cell comprises a magnetic tunnel junction, with each row featuring a word line and each column a bit line. The device also incorporates a column select device that selects a bit line, along with a sense amplifier that has a first input corresponding to a selected bit line and a second input corresponding to a reference bit line. The design includes a reference column with a conductive element coupled to the magnetic tunnel junctions, enhancing the efficiency and performance of the device.

Career Highlights

Zhang is currently employed at Everspin Technologies, Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of STT-MRAM, a type of non-volatile memory that offers high speed and efficiency.

Collaborations

Zhang collaborates with notable colleagues such as Syed M Alam and Thomas Andre, contributing to a dynamic team focused on pushing the boundaries of magnetoresistive technology.

Conclusion

Yaojun Zhang's contributions to the field of magnetoresistive devices exemplify his innovative spirit and dedication to advancing technology. His work at Everspin Technologies, Inc. continues to influence the future of memory storage solutions.

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