Yanjing He

Title: Yanjing He: Innovator in SiC Ohmic Contact Preparation

Introduction

Yanjing He is a notable inventor based in Xi'an, China. He has made significant contributions to the field of semiconductor technology, particularly in the preparation of SiC ohmic contacts. His innovative methods have the potential to enhance the performance of electronic devices.

Latest Patents

Yanjing He holds a patent for a method of preparing SiC ohmic contact with low specific contact resistivity. This method involves selecting a SiC substrate and preparing a graphene/SiC structure by forming graphene on the Si-face of the SiC substrate. The process includes depositing an Au film on the graphene, creating a first transfer electrode pattern through photolithography, and etching the Au film and graphene to form a second transfer electrode pattern. The resulting Au electrode is then annealed, which significantly reduces the potential barrier associated with the SiC interface. The specific contact resistance of the ohmic contact reaches the order of 10˜10Ω·cm, demonstrating high repeatability.

Career Highlights

Yanjing He is affiliated with Xidian University, where he continues to advance research in semiconductor materials and their applications. His work has garnered attention for its practical implications in improving electronic device efficiency.

Collaborations

Yanjing He collaborates with esteemed colleagues, including Yanfei Hu and Hui Guo, who contribute to his research endeavors.

Conclusion

Yanjing He is a pioneering inventor whose work in SiC ohmic contact preparation showcases his commitment to advancing semiconductor technology. His innovative methods and collaborations position him as a key figure in the field.