Yangli Xin

Title: Innovations of Yangli Xin in GaN Power Devices

Introduction

Yangli Xin is a notable inventor based in Chengdu, China. He has made significant contributions to the field of power electronics, particularly in the development of circuits for GaN (Gallium Nitride) power devices. His innovative work has led to the filing of a patent that enhances the efficiency and performance of gate drive circuits.

Latest Patents

Yangli Xin holds a patent for a "Switch bootstrap charging circuit suitable for gate drive circuit of GaN power device." This invention includes a high-voltage MOSFET, a low-voltage MOSFET, a high-voltage MOSFET control module, and a low-voltage MOSFET control module. The low-voltage MOSFET is a PMOS transistor, with its source connected to the power supply voltage. The drain of the high-voltage MOSFET serves as the output terminal of the switch bootstrap charging circuit. The control modules generate gate drive signals for both the low-voltage and high-voltage MOSFETs based on the signal from the lower power transistor.

Career Highlights

Yangli Xin is affiliated with the University of Electronic Science and Technology of China, where he continues to advance research in power electronics. His work is characterized by a focus on innovative solutions that address the challenges faced in modern electronic devices.

Collaborations

Yangli Xin collaborates with colleagues such as Xin Ming and Li Hu, contributing to a dynamic research environment that fosters innovation and development in the field of electronics.

Conclusion

Yangli Xin's contributions to the field of GaN power devices through his innovative patent demonstrate his commitment to advancing technology. His work not only enhances the efficiency of power circuits but also paves the way for future developments in electronic devices.