Company Filing History:
Years Active: 2011
Title: Yang Yang - Innovator in Nanowire Technology
Introduction
Yang Yang is a prominent inventor based in Fairfax Station, VA (US). He has made significant contributions to the field of nanotechnology, particularly with his innovative work on nanowire field effect junction diodes. His research and inventions have the potential to impact various applications in electronics and optoelectronics.
Latest Patents
Yang Yang holds a patent for a nanowire field effect junction diode. This invention is constructed on an insulating transparent substrate that allows various forms of radiation, such as visual light, ultraviolet radiation, or infrared radiation, to pass through. The design includes a nanowire disposed on the substrate, with an anode connected to one end and a cathode connected to the other. An oxide layer covers the nanowire, and two conducting gates are positioned on top of the oxide layer, allowing for the dynamic formation of a controllable PN junction along the nanowire channel by applying opposite gate voltages. This innovative design enables radiation striking the nanowire to create a current between the anode and cathode.
Career Highlights
Yang Yang is associated with George Mason Intellectual Properties, Inc., where he continues to develop and refine his inventions. His work in this organization highlights his commitment to advancing technology and innovation in the field of nanotechnology.
Collaborations
Yang has collaborated with notable colleagues, including Qiliang Li and Dimitris E Ioannou. These partnerships have contributed to the development of his groundbreaking inventions and have fostered a collaborative environment for innovation.
Conclusion
Yang Yang is a distinguished inventor whose work on nanowire technology exemplifies the potential of innovative solutions in modern electronics. His contributions are paving the way for future advancements in the field.