Yanfeng Ma

Title: Yanfeng Ma: Innovator in GaN Power Semiconductor Technology

Introduction

Yanfeng Ma is a prominent inventor based in Nanjing, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of GaN power semiconductor devices. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.

Latest Patents

Yanfeng Ma holds a patent for a GaN power semiconductor device integrated with a self-feedback gate control structure. This device comprises a substrate, a buffer layer, a channel layer, and a barrier layer. The gate control area is formed by a first metal source electrode, a first P-type GaN cap layer, a first metal gate electrode, a first metal drain electrode, a second P-type GaN cap layer, and a second metal gate electrode. The active working area is created by the first metal source electrode, a third P-type GaN cap layer, a third metal gate electrode, a second metal drain electrode, the second P-type GaN cap layer, and a second metal source electrode. The overall gate leaking current of the device is regulated by the gate control area, which enhances the integration level, reduces parasitic effects, and effectively relieves charge-storage effects, thus improving the threshold stability of the device.

Career Highlights

Yanfeng Ma is affiliated with Southeast University, where he continues to advance his research in semiconductor technology. His work has garnered attention for its innovative approach and practical applications in the industry.

Collaborations

Yanfeng Ma has collaborated with notable colleagues such as Siyang Liu and Sheng Li, contributing to a dynamic research environment that fosters innovation and development in semiconductor technologies.

Conclusion

Yanfeng Ma's contributions to GaN power semiconductor technology exemplify the spirit of innovation in the field. His patent reflects a significant advancement that could have lasting impacts on the industry.