Company Filing History:
Years Active: 2013
Title: Yanfeng Jiang: Innovator in Surge Protection Technology
Introduction
Yanfeng Jiang is a notable inventor based in Beijing, China. He has made significant contributions to the field of surge protection technology, particularly through his innovative patent.
Latest Patents
Yanfeng Jiang holds a patent for a monolithically-integrated dual surge protective device. This device includes a LDMOS device and a diode assembly made up of multiple diodes arranged in a back-to-back configuration. One end of the diode assembly is connected to the drain electrode of the LDMOS device, while the other end connects to the gate electrode. This design allows for the diode assembly to be fabricated directly in the gate electrode area after the LDMOS device has been completed. The protective device combines the operating principles and structures of diodes and LDMOS, offering enhanced surge prevention and cost reduction by integrating the components into a single chip.
Career Highlights
Yanfeng Jiang is affiliated with the North China University of Technology, where he continues to advance his research and development in electrical engineering and surge protection technologies. His work has garnered attention for its practical applications and innovative approach.
Collaborations
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Conclusion
Yanfeng Jiang's contributions to surge protection technology exemplify the impact of innovative thinking in engineering. His patent for the monolithically-integrated dual surge protective device showcases his commitment to enhancing device efficiency and cost-effectiveness.