Shaanxi, China

Xuesong Zhou


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2020

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1 patent (USPTO):

Title: Innovations of Xuesong Zhou in Magnetic Structures

Introduction

Xuesong Zhou is a prominent inventor based in Shaanxi, China. He has made significant contributions to the field of magnetic structures, particularly in the development of advanced memory technologies. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.

Latest Patents

Xuesong Zhou holds a patent for a magnetic structure based on a synthetic antiferromagnetic free layer and derivative spin-orbit torque magnetic random access memory (SOT-MRAM). This magnetic structure includes a magnetic tunnel junction regulated by an electric field, along with a spin-orbit layer positioned below the junction. The patent describes how the transformation from antiferromagnetic coupling to ferromagnetic coupling of the free layer is controlled by an electric field. The SOT-MRAM, which incorporates this magnetic structure, is designed to achieve stable data writing through the combined interaction of electric field and current. It boasts advantages such as a simple structure for scaling, ultralow power consumption, ultrahigh speed of switching, radiation resistance, and non-volatility.

Career Highlights

Xuesong Zhou is affiliated with Xi'an Jiaotong University, where he continues to advance research in magnetic technologies. His work has garnered attention for its potential applications in next-generation memory devices. Zhou's innovative approach to magnetic structures has positioned him as a key figure in the field.

Collaborations

Xuesong Zhou collaborates with notable colleagues, including Tai Min and Xue Zhou, who contribute to his research endeavors. Their combined expertise enhances the development of cutting-edge technologies in magnetic structures.

Conclusion

Xuesong Zhou's contributions to the field of magnetic structures and memory technologies highlight his innovative spirit and dedication to advancing scientific knowledge. His patent reflects a significant step forward in the development of efficient and high-performance memory systems.

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