Houston, TX, United States of America

Xuemei Wang

USPTO Granted Patents = 2 

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:

goldMedal2 out of 832,880 
Other
 patents

Years Active: 2004-2006

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2 patents (USPTO):Explore Patents

Title: Xuemei Wang: Innovator in Semiconductor Technology

Introduction

Xuemei Wang is a prominent inventor based in Houston, Texas. She has made significant contributions to the field of semiconductor technology, holding two patents that showcase her innovative approach to enhancing semiconductor performance.

Latest Patents

Her latest patents include a method for shallow dopant distribution, where vacancies and dopant ions are introduced near the surface of a semiconductor wafer. This technique allows for dopant ions to diffuse by an interstitialcy mechanism, resulting in greatly reduced diffusivity. Consequently, this leads to a very low resistivity doped region and a very shallow junction. Another notable patent is for a semiconductor wafer with an ultra-thin doping level formed by defect engineering, which employs similar principles to achieve optimal performance.

Career Highlights

Xuemei Wang's career is marked by her dedication to advancing semiconductor technology. Her innovative methods have the potential to revolutionize the industry by improving the efficiency and effectiveness of semiconductor devices.

Collaborations

She has collaborated with esteemed colleagues such as Wei-Kan Chu and Lin Shao, contributing to a dynamic research environment that fosters innovation and discovery.

Conclusion

Xuemei Wang's work in semiconductor technology exemplifies the impact of innovative thinking in engineering. Her patents reflect a commitment to pushing the boundaries of what is possible in the field.

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