Xuchao Li

Title: Xuchao Li: Innovator in Semiconductor Technology

Introduction

Xuchao Li is a prominent inventor based in Wuxi New District, China. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patents. His work focuses on enhancing the efficiency and functionality of semiconductor components.

Latest Patents

Xuchao Li holds a patent for a lateral double-diffused metal oxide semiconductor component and its manufacturing method. This invention includes a semiconductor substrate with a drift area, which contains a trap area and a drain area. The trap area features an active area and a channel, while the drift area is equipped with a deep trench isolation structure. This structure is strategically arranged between the trap area and the drain area, incorporating alternately arranged first p-type and n-type injection areas at its base. This patent showcases his expertise in semiconductor design and manufacturing.

Career Highlights

Xuchao Li is currently employed at CSMC Technologies Fab2 Co., Ltd., where he continues to develop cutting-edge semiconductor technologies. His work at this company has positioned him as a key player in the semiconductor industry, contributing to advancements that benefit various applications.

Collaborations

Xuchao Li collaborates with talented professionals in his field, including coworkers Nailong He and Sen Zhang. These collaborations enhance the innovation process and lead to the development of more advanced technologies.

Conclusion

Xuchao Li's contributions to semiconductor technology through his patent and work at CSMC Technologies Fab2 Co., Ltd. highlight his role as an influential inventor. His innovative approach continues to shape the future of semiconductor components.