Albuquerque, NM, United States of America

Xinyu Sun


Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 99(Granted Patents)


Company Filing History:


Years Active: 2009-2014

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4 patents (USPTO):Explore Patents

Title: Innovations of Xinyu Sun in Semiconductor Technology

Introduction

Xinyu Sun is a prominent inventor based in Albuquerque, NM (US), known for his significant contributions to semiconductor technology. He holds a total of 4 patents, showcasing his innovative approach to the development of advanced materials and devices.

Latest Patents

One of Xinyu Sun's latest patents is focused on the pulsed growth of catalyst-free GaN nanowires and their application in group III nitride semiconductor bulk material. This invention provides semiconductor devices that include high-quality, defect-free group III-N nanowires and uniform nanowire arrays. The scalable processes for manufacturing these nanowires allow for precise control over their position, orientation, cross-sectional features, length, and crystallinity. The pulsed growth mode enables the fabrication of group III-N nanowires with lengths ranging from about 10 nm to about 1000 microns, featuring a consistent diameter of approximately 10-1000 nm. Additionally, high-quality GaN substrate structures can be formed by coalescing multiple GaN nanowires, facilitating the production of visible LEDs and lasers. Core-shell nanowire/MQW active structures can also be developed through core-shell growth on the nonpolar sidewalls of each nanowire.

Career Highlights

Xinyu Sun is affiliated with Stc.unm, where he continues to push the boundaries of semiconductor research and development. His work has significantly impacted the field, particularly in the area of nanowire technology.

Collaborations

Xinyu has collaborated with notable colleagues, including Stephen D. Hersee and Xin Wang, who contribute to the advancement of semiconductor innovations.

Conclusion

Xinyu Sun's innovative work in semiconductor technology, particularly in the development of GaN nanowires, highlights his role as a leading inventor in the field. His contributions are paving the way for future advancements in electronic devices and materials.

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