Company Filing History:
Years Active: 2002
Title: Innovations by Xinming Huang in Silicon Crystal Manufacturing
Introduction
Xinming Huang is a notable inventor based in Nagano, Japan. He has made significant contributions to the field of materials science, particularly in the manufacturing of silicon single crystals. His innovative methods have the potential to enhance the quality and efficiency of silicon production.
Latest Patents
Xinming Huang holds a patent for a method titled "Method for manufacturing dislocation-free silicon single crystal." This patent describes a process that includes preparing a silicon seed crystal formed of a dislocation-free single crystal with a boron concentration of 1×10 atoms/cm or more. The method also involves preparing a silicon melt with a boron concentration that differs from that of the seed crystal by 7×10 atoms/cm or less. The seed crystal is then brought into contact with the silicon melt to grow the silicon single crystal. This innovative approach addresses critical challenges in silicon crystal manufacturing.
Career Highlights
Xinming Huang is affiliated with Shinshu University, where he continues to advance research in materials science. His work has garnered attention for its practical applications in various industries, including electronics and renewable energy.
Collaborations
Xinming Huang has collaborated with esteemed colleagues such as Keigo Hoshikawa and Tatsuo Fukami. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Xinming Huang's contributions to the field of silicon crystal manufacturing exemplify the importance of innovation in advancing technology. His patented methods not only improve the quality of silicon production but also pave the way for future advancements in materials science.