Company Filing History:
Years Active: 2018
Title: Innovations of Xinjiang Zhang
Introduction
Xinjiang Zhang is a prominent inventor based in Beijing, China. He has made significant contributions to the field of electronics, particularly in the development of advanced memristor technology. His innovative work has garnered attention in both academic and industrial circles.
Latest Patents
One of Xinjiang Zhang's notable patents is the floating memristor. This invention features a nano-battery positioned between a top and bottom floating gate. The floating memristor operates as an artificial synapse, where the top floating gate assembly and the anode of the nano-battery convert electric signals into ionic signals. This process simulates a presynaptic membrane through tunneling and field effects. The electrolyte of the nano-battery acts as an ionic channel, representing a synaptic gap. Furthermore, the anode and bottom floating gate work together to transform ionic signals back into electric signals, mimicking a postsynaptic membrane. Xinjiang Zhang holds 1 patent for this groundbreaking technology.
Career Highlights
Xinjiang Zhang is affiliated with Beihang University, where he continues to engage in research and development. His work at the university has positioned him as a key figure in the exploration of memristor applications and their potential impact on future technologies.
Collaborations
Xinjiang Zhang collaborates with fellow researcher Anping Huang, contributing to advancements in their shared field of study. Their partnership enhances the innovative potential of their projects and fosters a collaborative research environment.
Conclusion
Xinjiang Zhang's contributions to the field of electronics, particularly through his floating memristor patent, highlight his role as an influential inventor. His work continues to pave the way for future innovations in artificial synapses and electronic devices.