Company Filing History:
Years Active: 2013
Title: Innovations in Flash Memory Technology by Xiaoli Ji
Introduction
Xiaoli Ji is a prominent inventor based in Jiangsu, China. He has made significant contributions to the field of non-volatile flash memory technology. His innovative approach has led to the development of a unique method for operating high-density multi-level cell (MLC) memory devices.
Latest Patents
Xiaoli Ji holds a patent titled "Method for operating a high density multi-level cell non-volatile flash memory device." This patent describes a localized trapping multi-level memory cell operating method. The process begins with providing a localized trapping memory cell with an initial threshold voltage of approximately 2.5V. An erasing operation is then performed to achieve a negative threshold level with uniform charge distribution along the channel region. To address the over-erasure issue, a programming operation is conducted to adjust the threshold voltage to a predetermined level between -2V and -1V. This negative voltage serves as a new initial state, allowing for a corresponding programming operation where electrons are locally injected into the storage layer. By controlling the quantity of injected electrons, the MLC storage is effectively achieved. Xiaoli Ji has 1 patent to his name.
Career Highlights
Xiaoli Ji is affiliated with Nanjing University, where he continues to advance research in memory technology. His work has garnered attention for its potential applications in improving data storage solutions.
Collaborations
Xiaoli Ji has collaborated with notable colleagues, including Yue Xu and Feng Yan, contributing to the advancement of technology in their field.
Conclusion
Xiaoli Ji's innovative methods in flash memory technology demonstrate his expertise and commitment to advancing the field. His contributions are paving the way for future developments in non-volatile memory devices.