Company Filing History:
Years Active: 2021-2022
Title: Xiaojie Chai: Innovator in Non-Volatile Ferroelectric Memory
Introduction
Xiaojie Chai is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of non-volatile ferroelectric memory, holding a total of 2 patents. His work focuses on innovative methods and structures that enhance memory technology.
Latest Patents
Xiaojie Chai's latest patents include a non-volatile ferroelectric memory and a method of preparing the same. This invention relates to a ferroelectric memory that comprises a ferroelectric storage layer, a first electrode, and a second electrode. The electrodes feature a buried conductive layer and an electrode layer, allowing for the reversal of electric domains when a write signal is applied. This process establishes a conductive passage between the electrodes.
Another notable patent is the three-dimensional non-volatile ferroelectric memory. This invention includes a ferroelectric memory array structure with multiple layers of memory cells arranged in a stacked configuration. The design incorporates word lines and bit lines that are orthogonal to each other, enhancing the efficiency of the memory cells.
Career Highlights
Xiaojie Chai is affiliated with Fudan University, where he continues to advance research in memory technology. His work has garnered attention for its potential applications in various electronic devices, making significant strides in the field.
Collaborations
Xiaojie collaborates with esteemed colleagues such as Anquan Jiang and Yan Mei Zhang. Their combined expertise contributes to the innovative research and development of advanced memory technologies.
Conclusion
Xiaojie Chai is a key figure in the development of non-volatile ferroelectric memory, with a focus on innovative solutions that push the boundaries of memory technology. His contributions are paving the way for future advancements in this critical field.