Location History:
- Heilongjiang, CN (2013)
- Harbin, CN (2013)
Company Filing History:
Years Active: 2013
Title: Innovations of Xiaohui Bai in Nanostructure Memristors
Introduction
Xiaohui Bai is a notable inventor based in Heilongjiang, China. He has made significant contributions to the field of nanotechnology, particularly in the development of quick-switch memristors. With a total of 2 patents, his work is paving the way for advancements in electronic components.
Latest Patents
Xiaohui Bai's latest patents focus on the method of manufacturing a nanostructure quick-switch memristor. This innovative device includes an upper electrode, a lower electrode, and three layers of nanomembrane positioned between them. The three layers consist of an N-type semiconductor layer, a neutral semiconductor layer on top of the N-type layer, and a P-type semiconductor layer on the neutral layer. The design of this memristor allows for quick switching speeds, a simple manufacturing process, and low production costs.
Career Highlights
Xiaohui Bai is affiliated with Heilongjiang University, where he continues to engage in research and development in the field of nanotechnology. His work has garnered attention for its practical applications in modern electronics.
Collaborations
Xiaohui Bai collaborates with Dianzhong Wen, a fellow researcher who contributes to his projects and innovations.
Conclusion
Xiaohui Bai's contributions to the field of nanostructure memristors highlight his innovative spirit and dedication to advancing technology. His patents reflect a commitment to improving electronic components through efficient design and manufacturing processes.