Xiangbiao Zhou

Title: Xiangbiao Zhou: Innovator in Semiconductor Technology

Introduction

Xiangbiao Zhou is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of ultra-shallow junction semiconductor field-effect transistors. His innovative work has implications for advanced technology nodes in the semiconductor industry.

Latest Patents

Xiangbiao Zhou holds a patent for an ultra-shallow junction semiconductor field-effect transistor and the method of making it. This patent discloses a process where a mixture film is formed on a semiconductor substrate with a gate structure using a physical vapor deposition (PVD) process. The mixture of metal and semiconductor dopants serves as a target, followed by an annealing process that forms ultra-shallow junctions and ultra-thin metal silicide. This method allows for the formation of ultra-shallow junctions suitable for semiconductor field-effect transistors at technology nodes of 14 nm, 11 nm, and beyond.

Career Highlights

Xiangbiao Zhou is affiliated with Fudan University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its innovative approach to improving the efficiency and performance of semiconductor devices.

Collaborations

Xiangbiao Zhou collaborates with notable colleagues, including Dongping Wu and Peng Xu. Their combined expertise contributes to the advancement of semiconductor research and development.

Conclusion

Xiangbiao Zhou's contributions to semiconductor technology, particularly through his patented innovations, highlight his role as a key figure in the field. His work not only enhances the understanding of semiconductor processes but also paves the way for future advancements in technology.