Wung-Ui Huang

Title: Wung-Ui Huang: Innovator in Thin Film Transistor Technology

Introduction

Wung-Ui Huang is a distinguished inventor based in Xin-Zhu, Taiwan, recognized for his contributions to the field of thin film transistors (TFT). With a focus on enhancing the functionality and reliability of semiconductor devices, he has made significant strides in innovation within the electronics industry.

Latest Patents

Wung-Ui Huang holds a notable patent for a thin film transistor (TFT) structure that features a planarized gate electrode. The patented method involves forming a substrate over which a gate electrode is placed, followed by a backfilling dielectric layer adjacent to but not covering the gate electrode. The process includes creating a gate dielectric layer, an active semiconductor layer, and a pair of source/drain electrodes that define the channel region of the active semiconductor layer. This method enhances the structural integrity and operational reliability of the thin film transistor.

Career Highlights

Wung-Ui Huang has dedicated his career to advancing semiconductor technology at the Industrial Technology Research Institute. His innovations have played a crucial role in the development of electronic devices, particularly in improving the performance and efficiency of thin film transistors.

Collaborations

Throughout his career, Wung-Ui Huang has collaborated with esteemed colleagues, including Dou-I Chen and Jr-Hong Chen. These collaborative efforts have fostered a dynamic exchange of ideas, propelling further advancements in technology and innovation.

Conclusion

Wung-Ui Huang’s contributions to the field of thin film transistor technology exemplify the vital role of inventors in driving innovation. With his patented methods, he continues to influence the electronics industry, paving the way for future advancements in semiconductor devices. His work at the Industrial Technology Research Institute highlights the importance of collaboration in the pursuit of groundbreaking inventions.