Company Filing History:
Years Active: 1995
Title: Wong S Ho: Innovator in Ion Assisted Deposition Processes
Introduction
Wong S Ho is a notable inventor based in Sugarland, Texas. He has made significant contributions to the field of material science, particularly through his innovative patent related to ion assisted deposition processes.
Latest Patents
Wong S Ho holds a patent for an "Ion assisted deposition process including reactive source gassification." This process involves depositing a compound of a metal and a reactive gas by heating a metal target in an evacuated chamber to a predetermined reaction temperature. This temperature is critical, being above half the melting point of the metal but below its vaporization temperature. At this temperature, the metal target reacts with the reactive gas to produce a gaseous compound or sub-compound, which is then reacted with the reactive gas on a substrate to form a solid layer of the compound.
Career Highlights
Wong S Ho is affiliated with the University of Houston System, where he continues to advance research in his field. His work has implications for various applications in technology and materials engineering.
Collaborations
Some of his notable coworkers include John Charles Wolfe and Darian L Licon, who contribute to the collaborative research environment at the University of Houston System.
Conclusion
Wong S Ho's innovative work in ion assisted deposition processes showcases his expertise and commitment to advancing material science. His contributions are valuable to both academic and industrial applications.