Busan, South Korea

Won-Tae Cho


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Innovations of Won-Tae Cho in Non-Volatile Memory Technology.

Introduction

Won-Tae Cho is a prominent inventor based in Busan, South Korea. He has made significant contributions to the field of non-volatile memory devices. His innovative work focuses on the development of advanced methods for depositing nanolaminate films.

Latest Patents

Won-Tae Cho holds a patent for a method of depositing a nanolaminate film for non-volatile floating gate memory devices by atomic layer deposition. The patent outlines a process that includes introducing a substrate into an atomic layer deposition reactor. It details the formation of a first high-dielectric-constant layer by alternately supplying an oxygen source and a metal source, which can be selected from aluminum, zirconium, or hafnium. Additionally, a nickel oxide layer is formed on the first layer, followed by a second high-dielectric-constant layer. This innovative method results in nanolaminate films that exhibit superior memory window characteristics compared to traditional memory devices fabricated using prior physical vapor deposition methods.

Career Highlights

Won-Tae Cho is affiliated with the Korea Research Institute of Chemical Technology. His work has been instrumental in advancing the technology behind non-volatile memory devices. He has demonstrated a commitment to research and innovation in the field of chemical technology.

Collaborations

Some of his notable coworkers include Chang-Gyoun Kim and Young-Kuk Lee. Their collaborative efforts contribute to the ongoing advancements in memory technology.

Conclusion

Won-Tae Cho's innovative methods in the field of non-volatile memory technology highlight his expertise and dedication to advancing this critical area of research. His contributions are paving the way for the next generation of memory devices.

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