Company Filing History:
Years Active: 1982-1984
Title: Innovations of William M Gosney, Jr.
Introduction
William M Gosney, Jr. is a notable inventor based in McKinney, TX (US). He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approaches to MOSFET fabrication and memory transistor design.
Latest Patents
Gosney's latest patents include a MOSFET fabrication process aimed at reducing overlap capacitance. This method involves forming interconnected metal oxide semiconductor field effect transistors on a P-type semiconductor substrate. The process includes the formation of an oxide layer, followed by a polysilicon layer, and a silicon nitride layer, which are selectively etched to create a conductor pattern. This pattern defines gate electrodes and interconnecting lines that link transistors to peripheral circuits. Additionally, he has developed a three-layer floating gate memory transistor with an erase gate, designed for programmable read-only memories. This device allows for the removal of charge stored on the floating gate, enhancing the functionality of memory storage.
Career Highlights
Gosney has worked at Mostek Corporation, where he has applied his expertise in semiconductor technology. His innovative work has contributed to advancements in the efficiency and performance of electronic devices.
Collaborations
Throughout his career, Gosney has collaborated with notable colleagues, including Vernon G McKenny and Chao C Mai. These collaborations have fostered a creative environment that has led to significant technological advancements.
Conclusion
William M Gosney, Jr. is a distinguished inventor whose work in semiconductor technology has had a lasting impact on the industry. His innovative patents reflect his commitment to advancing electronic device performance and efficiency.