William J Stiltz

Title: The Innovations of William J Stiltz

Introduction

William J Stiltz is a notable inventor based in Anna, Texas. He has made significant contributions to the field of plasma technology, particularly in the design of electrodes for semiconductor manufacturing. His work has implications for improving the efficiency and effectiveness of plasma reactors.

Latest Patents

Stiltz holds a patent for an "Isolation substrate ring for plasma reactor." This innovative design features a radio frequency (RF) glow discharge plasma etch electrode capable of creating high power density plasma with uniform etch rates. The design allows for automatic loading of semiconductor wafers from outside the plasma region, enhancing operational efficiency. The electrode assembly consists of an RF energy-applied electrode surrounded by an insulator and a grounded surface, all maintaining cylindrical symmetry. This configuration effectively combines high power density plasma while providing a channel for gas flow and optical observation of the plasma. The design is particularly beneficial for high-rate, uniform, anisotropic etching, especially for silicon dioxide.

Career Highlights

William J Stiltz is associated with Texas Instruments Corporation, where he has contributed to advancements in semiconductor technology. His work has been instrumental in enhancing the capabilities of plasma reactors used in the manufacturing process.

Collaborations

Stiltz has collaborated with notable colleagues, including Cecil J Davis and John E Spencer. Their combined expertise has contributed to the development of innovative solutions in the field of plasma technology.

Conclusion

William J Stiltz's contributions to plasma technology and semiconductor manufacturing highlight his role as an influential inventor. His patented designs continue to impact the efficiency of plasma reactors, showcasing the importance of innovation in this field.