William H Perez

Title: William H Perez: Innovator in Long Wavelength Light Emitting Devices

Introduction

William H Perez is a notable inventor based in San Jose, California. He has made significant contributions to the field of light emitting devices, particularly through his innovative work on indium arsenide phosphide (InAsP) quantum well structures. His expertise and inventions have paved the way for advancements in long wavelength light emission technology.

Latest Patents

William H Perez holds a patent for a "Long wavelength indium arsenide phosphide (InAsP) quantum well active region and method for producing same." This patent describes an InAsP active region designed for long wavelength light emitting devices. The method involves placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor to support the growth of an InAsP film. The process includes forming a quantum well layer of InAsP and a barrier layer adjacent to it, both created at temperatures below 520 degrees Celsius. This temperature control is crucial as it results in fewer dislocations by suppressing the relaxation of the layers. The patent also discloses a long wavelength active region that includes InAsP quantum well layers and InGaP barrier layers.

Career Highlights

William H Perez is currently associated with Avago Technologies General IP Pte, Ltd., where he continues to innovate in the field of semiconductor technology. His work has been instrumental in enhancing the performance and efficiency of light emitting devices.

Collaborations

Throughout his career, William has collaborated with esteemed colleagues such as David P Bour and Michael R T Tan. These collaborations have further enriched his research and development efforts in the field.

Conclusion

William H Perez is a distinguished inventor whose work on long wavelength light emitting devices has made a significant impact in the field of semiconductor technology. His innovative approaches and patented methods continue to influence advancements in this area.