Beverly, MA, United States of America

William F Divergilio


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 18(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: The Innovations of William F. Divergilio

Introduction

William F. Divergilio is an accomplished inventor based in Beverly, MA (US). He is known for his significant contributions to the field of ion beam technology. His innovative work has led to the development of a unique apparatus that enhances the efficiency of ion implantation processes.

Latest Patents

Divergilio holds a patent for a "Time of Flight Energy Measurement Apparatus for an Ion Beam Implanter." This invention includes an ion source for generating an ion beam and an ion acceleration assembly that accelerates the beam, resulting in a series of ion pulses. The apparatus features spaced apart sensors that measure the average kinetic energy of ions in the beam. The timing circuitry calculates the elapsed time for selected ion pulses, converting this information into a measure of the energy of the ion beam. This innovation is crucial for improving the precision of ion implantation in various applications.

Career Highlights

William F. Divergilio is currently employed at Eaton Corporation, where he continues to push the boundaries of technology in his field. His work has not only advanced the capabilities of ion beam technology but has also contributed to the overall efficiency of manufacturing processes that rely on ion implantation.

Collaborations

Divergilio has collaborated with notable colleagues, including Edward K. McIntyre and Kevin W. Wenzel. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

William F. Divergilio's contributions to ion beam technology exemplify the spirit of innovation. His patented apparatus represents a significant advancement in the field, showcasing his dedication to improving industrial processes. His work continues to influence the future of ion implantation technology.

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