William B Chin

Title: The Innovations of William B Chin

Introduction

William B Chin is a notable inventor based in Wappingers Falls, NY (US). He has made significant contributions to the field of memory technology, particularly through his innovative patent related to memory cells. His work has implications for the efficiency and functionality of electronic devices.

Latest Patents

Chin holds a patent for a "Memory cell with active device for saturation capacitance discharge." This invention describes a transistor memory cell that utilizes unclamped conducting transistors to store data. The design includes controlled active devices that discharge the saturation capacitance of the conducting transistors before new data is written. Each active device is characterized by a forward low-impedance current direction and a reverse high-impedance current direction. The active devices may include diodes or PNP transistors, enhancing the memory cell's performance and reliability.

Career Highlights

William B Chin is associated with the International Business Machines Corporation (IBM), where he has contributed to various projects and innovations. His work at IBM has allowed him to explore advanced technologies and collaborate with other experts in the field.

Collaborations

Chin has worked alongside notable colleagues such as Rudolph D Dussault and Ronald W Knepper. These collaborations have fostered an environment of innovation and have led to the development of cutting-edge technologies in memory systems.

Conclusion

William B Chin's contributions to memory technology through his innovative patent demonstrate his expertise and commitment to advancing electronic devices. His work continues to influence the field and showcases the importance of innovation in technology.