William A Thore

Title: Innovations of William A. Thore in Silicon Carbide Growth

Introduction

William A. Thore is an accomplished inventor based in Morrisville, NC (US). He has made significant contributions to the field of materials science, particularly in the growth of silicon carbide (SiC). With a total of 2 patents to his name, Thore's work has implications for various applications in electronics and semiconductor industries.

Latest Patents

Thore's latest patents focus on a method for controlled growth of silicon carbide and the structures produced by this method. The process involves placing a sacrificial substrate in a growth zone with a source material that may include a low-solubility impurity. SiC is initially grown on the sacrificial substrate to condition the source material. After this, the sacrificial substrate is replaced with the final substrate, allowing SiC to be grown on it. This innovative method results in a single crystal of silicon carbide that exhibits substantially fewer micropipe defects. Additionally, the crystal may have a uniform concentration of the low-solubility impurity, making it suitable for producing wafers and SiC die.

Career Highlights

William A. Thore is currently associated with Cree GmbH, a company known for its advancements in semiconductor technology. His work at Cree has allowed him to explore and develop innovative methods for silicon carbide growth, contributing to the company's reputation as a leader in the industry.

Collaborations

Thore has collaborated with notable coworkers, including Robert Tyler Leonard and Hudson McDonald Hobgood. These partnerships have fostered a collaborative environment that enhances the innovation process and leads to groundbreaking advancements in their field.

Conclusion

William A. Thore's contributions to the controlled growth of silicon carbide represent a significant advancement in materials science. His innovative methods and collaborations continue to influence the semiconductor industry positively.