Chatham, NJ, United States of America

Wilfried R Wagner


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 20(Granted Patents)


Company Filing History:


Years Active: 1980

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1 patent (USPTO):Explore Patents

Title: Wilfried R Wagner: Innovator in Laser Technology

Introduction

Wilfried R Wagner is a notable inventor based in Chatham, NJ (US). He has made significant contributions to the field of laser technology, particularly with his innovative designs and patents. His work has had a lasting impact on the development of semiconductor devices.

Latest Patents

Wagner holds a patent for a "Buried double heterostructure laser device." This invention describes a buried double heterostructure laser device that utilizes a wafer of double heterostructure material formed into narrow mesa stripes. A native oxide coating is applied to the side walls of the mesa, and semiconductor material with an index of refraction closely matched to the active region is deposited over the mesa structure. The design achieves vertical carrier and optical confinement through higher bandgap cladding layers, while the native oxide serves as an electrical insulator to confine pumping current to the mesa. This innovative device has demonstrated continuous wave threshold currents at room temperature as low as 55 mA.

Career Highlights

Wagner has had a distinguished career at Bell Telephone Laboratories, where he has been involved in groundbreaking research and development in laser technology. His work has contributed to advancements in the efficiency and performance of laser devices.

Collaborations

Throughout his career, Wagner has collaborated with esteemed colleagues such as Robert Louis Hartman and Marc Ilegems. These collaborations have fostered innovation and have led to significant advancements in their respective fields.

Conclusion

Wilfried R Wagner's contributions to laser technology exemplify the spirit of innovation and dedication to research. His patented inventions continue to influence the development of advanced semiconductor devices.

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