Sindelfingen, Germany

Wilfried G Koenig


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 1976

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1 patent (USPTO):Explore Patents

Title: Wilfried G Koenig: Innovator in Ion Implantation Technology

Introduction

Wilfried G Koenig is a notable inventor based in Sindelfingen, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods of ion implantation.

Latest Patents

Koenig holds a patent for a "Method of ion implantation through an electrically insulative material." This method involves forming a layer of electrically insulative material, such as silicon dioxide, on a semiconductor substrate. A beam of ions is directed at the insulative layer, which has been partially etched away to allow the ions to penetrate into the substrate. This process is crucial for creating specific ion-implanted regions within semiconductor devices.

Career Highlights

Throughout his career, Koenig has been associated with the International Business Machines Corporation (IBM), where he has worked on advancing semiconductor technologies. His expertise in ion implantation has contributed to the development of more efficient and effective semiconductor devices.

Collaborations

Koenig has collaborated with notable colleagues, including James S Makris and Burton J Masters. These collaborations have further enhanced the impact of his work in the field of semiconductor technology.

Conclusion

Wilfried G Koenig's innovative approach to ion implantation has made a lasting impact on semiconductor technology. His contributions continue to influence advancements in the industry.

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