Company Filing History:
Years Active: 2011-2024
Title: Innovations by Wenjiang Ding in Magnesium Hydride Applications
Introduction
Wenjiang Ding is a notable inventor based in Shanghai, China. He has made significant contributions to the field of materials science, particularly in the development of magnesium hydride applications. With a total of 6 patents, his work focuses on innovative solutions for health and medical applications.
Latest Patents
Wenjiang Ding's latest patents include the use of magnesium hydride in the preparation of compositions for preventing and treating chronic periodontitis. This innovative magnesium hydride toothpaste contains 1% to 3% magnesium hydride, which provides various benefits such as disinfection, anti-inflammation, and the alleviation of gingival swelling and bleeding. The toothpaste effectively improves symptoms of periodontitis and promotes oral health through its unique formulation. Another significant patent involves an integrated device for preparing magnesium hydride powder. This device features a heating chamber, a powder-making chamber, and a reaction chamber, allowing for an efficient and automated process to produce magnesium hydride powder with uniform particles and excellent performance.
Career Highlights
Wenjiang Ding has worked at prestigious institutions such as Shanghai Jiaotong University and Shandong Zhongbaokang Medical Devices Co., Ltd. His experience in these organizations has contributed to his expertise in the field and has facilitated his innovative research.
Collaborations
Wenjiang Ding has collaborated with notable colleagues, including Guangyin Yuan and Yaofu Jiang. These partnerships have likely enhanced his research and development efforts in magnesium hydride applications.
Conclusion
Wenjiang Ding's contributions to the field of magnesium hydride applications demonstrate his commitment to innovation and improving health outcomes. His patents reflect a blend of scientific research and practical application, making a significant impact in the medical field.