Company Filing History:
Years Active: 2014-2015
Title: Wendy Ou: Innovator in 3D Memory Technology
Introduction
Wendy Ou is a prominent inventor based in San Jose, CA, known for her significant contributions to the field of non-volatile memory technology. With a total of 6 patents, she has made remarkable advancements that enhance the performance and reliability of memory devices.
Latest Patents
One of her latest patents focuses on a method for pre-charging during programming for 3D memory using gate-induced drain leakage (GIDL). This innovative approach addresses the challenges faced in programming operations of 3D stacked non-volatile memory devices. By pre-charging the channel of an inhibited NAND string, Wendy's invention achieves a high level of boosting that prevents program disturbance in inhibited storage elements. During a program-verify iteration, the drain-side select gate transistor is reverse biased to generate GIDL, boosting the channel to a pre-charge level, such as 1.5V. When the program pulse is applied to a selected word line, the channel is further boosted due to capacitive coupling, ensuring effective pre-charging even for partially programmed NAND strings.
Career Highlights
Wendy Ou is currently employed at SanDisk Technologies Inc., where she continues to innovate and develop cutting-edge memory solutions. Her work has significantly impacted the efficiency and functionality of memory devices, making her a key player in the industry.
Collaborations
Throughout her career, Wendy has collaborated with talented individuals such as Yingda Dong and Masaaki Higashitani. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.
Conclusion
Wendy Ou's contributions to 3D memory technology exemplify her dedication to innovation and excellence in the field. Her patents not only advance the technology but also pave the way for future developments in non-volatile memory devices.