Wen Wang

Title: Innovations of Wen Wang in Radiation-Hardened Memory Storage

Introduction

Wen Wang is an accomplished inventor based in Wuhan, China. He has made significant contributions to the field of memory storage technology, particularly in developing radiation-hardened units. With a total of two patents to his name, his work is crucial for applications in environments where radiation exposure is a concern.

Latest Patents

Wen Wang's latest patents include a radiation-hardened memory storage unit and a radiation-hardened storage unit. The radiation-hardened memory storage unit is designed to resist total ionizing dose effects and incorporates PMOS transistors. The second patent, the radiation-hardened storage unit, consists of a basic storage unit, a redundant storage unit, and a two-way feedback unit. The basic storage unit features four PMOS transistors, with the first two serving as read-out access transistors and the latter two as write-in access transistors. The redundant storage unit also includes four PMOS transistors, similarly configured for read-out and write-in access. The two-way feedback unit establishes a feedback path between the storage node and the redundant storage node, enhancing the reliability of the storage system.

Career Highlights

Wen Wang is affiliated with Huazhong University of Science and Technology, where he continues to advance research in memory storage technologies. His innovative work has positioned him as a key figure in the development of robust storage solutions.

Collaborations

Wen Wang collaborates with notable colleagues, including Hongshi Sang and Tianxu Zhang, who contribute to his research endeavors.

Conclusion

Wen Wang's contributions to radiation-hardened memory storage technology demonstrate his expertise and commitment to innovation. His patents reflect a significant advancement in ensuring data integrity in challenging environments.