Wen-I Wang

Title: The Innovations of Wen-I Wang

Introduction

Wen-I Wang is a notable inventor based in Putnam Valley, NY (US). He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance of field-effect transistors through innovative designs.

Latest Patents

Wang holds a patent for a semiconductor device with hole conduction via strained lattice. This invention involves a field-effect transistor that includes a conduction channel between a source terminal and a drain terminal, utilizing holes as charge carriers. The conduction channel is situated within a layer of material made from a group III-V compound, which has a crystalline lattice structure that is stressed in two dimensions. This is achieved through epitaxial growth on a thicker, rigid supporting layer made from a different group III-V compound with a larger lattice spacing. The relatively thin layer containing the conduction channel is on the order of a few electron wavelengths in thickness. The stretching of this layer shifts the energy levels of holes, elevating light holes to a higher energy level characterized by increased mobility. Wang's innovative approach has the potential to enhance the efficiency of semiconductor devices.

Career Highlights

Wen-I Wang is associated with International Business Machines Corporation (IBM), where he has contributed to various projects in semiconductor technology. His expertise in this field has positioned him as a valuable asset to the company.

Collaborations

Wang has collaborated with notable figures in the industry, including Leo Esaki and Leroy L. Chang. These collaborations have further enriched his work and contributed to advancements in semiconductor technology.

Conclusion

Wen-I Wang's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to influence the development of more efficient electronic devices.