Wen C Huang

Title: Innovations of Wen C Huang in Schottky Diode Technology

Introduction

Wen C Huang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of Schottky diodes. With a total of 2 patents, his work has advanced the understanding and application of these essential electronic components.

Latest Patents

Huang's latest patents include a groundbreaking invention titled "N-INP Schottky diode structure and a method of making the same." This patent discloses a new Schottky diode structure, Pt/Al/n-InP, where the thickness of the aluminum layer is restricted to a range of about 80-120 angstroms. This innovative structure achieves a barrier height of 0.74 eV and an ideality factor of 1.11 after being annealed at 300 degrees Celsius for 10 minutes. The improvement in barrier height is attributed to the formation of aluminum oxide as the interfacial layer, enhancing the diode's performance.

Career Highlights

Wen C Huang is affiliated with the National Science Council, where he continues to push the boundaries of semiconductor research. His work has been instrumental in developing new materials and methods that enhance the efficiency and reliability of electronic devices.

Collaborations

Huang has collaborated with esteemed colleagues, including Tan F Lei and Chung L Lee, who have contributed to his research endeavors. Their combined expertise has fostered a productive environment for innovation in semiconductor technology.

Conclusion

Wen C Huang's contributions to the field of Schottky diodes exemplify the impact of innovative research on technology. His patents reflect a commitment to advancing semiconductor applications, and his collaborations further enhance the potential for future breakthroughs.