Weidong Chen

Title: Weidong Chen: Innovator in Capacitor Technology

Introduction

Weidong Chen is a notable inventor based in San Jose, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of capacitor processes. His innovative work has led to the granting of a patent that enhances the performance and reliability of capacitors.

Latest Patents

Weidong Chen holds a patent titled "Process for forming silicided capacitor utilizing oxidation barrier layer." This patent describes a process flow for creating a polysilicon-to-polysilicon capacitor. The process involves performing the capacitor anneal step in a nitrous oxide ambient, which results in the formation of a nitroxide layer over the heavily doped polysilicon of the upper electrode. This nitroxide layer serves as a barrier against oxygen diffusion, preventing further oxidation during subsequent steps. The nitroxide barrier layer can be easily removed before the formation of the silicided capacitor electrode contacts, ensuring that there is no risk of overetching gate oxide or spacer structures.

Career Highlights

Weidong Chen is currently employed at National Semiconductor Corporation, where he continues to work on innovative semiconductor technologies. His expertise in capacitor design and processing has made him a valuable asset to the company.

Collaborations

One of his notable collaborators is Christopher S Blair, with whom he has worked on various projects related to semiconductor technology.

Conclusion

Weidong Chen's contributions to capacitor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work at National Semiconductor Corporation continues to influence the development of reliable semiconductor devices.