Company Filing History:
Years Active: 2013
Title: Wei Guo: Innovator in Magnetic Tunnel Junctions
Introduction
Wei Guo is a prominent inventor based in Grenoble, France. He has made significant contributions to the field of magnetic tunnel junctions, particularly through his innovative patent. His work focuses on the modeling of magnetic layers and the dynamics of spin-polarized currents.
Latest Patents
Wei Guo holds a patent titled "Method for modeling a magnetic tunnel junction with spin-polarized current writing." This invention involves a junction comprising a stack of at least two magnetic layers. The first layer is a soft magnetic layer with controllable magnetization, while the second layer is a hard magnetic layer with fixed magnetization. The dynamic behavior of the junction is modeled by an equivalent electrical circuit that includes two coupled parts. The first part represents the stack of layers, where a current flows corresponding to the polarized current. The second part models the behavior of the magnetic moment, incorporating three circuits that represent the dimensions of the magnetic moment.
Career Highlights
Throughout his career, Wei Guo has worked with notable organizations such as the Commissariat à l'Énergie Atomique et aux Énergies Alternatives and the Centre National de la Recherche Scientifique. His experience in these institutions has allowed him to develop and refine his innovative ideas in the field of magnetic technology.
Collaborations
Wei Guo has collaborated with various professionals in his field, including his coworker Guillaume Prenat. Their joint efforts have contributed to advancements in the understanding and application of magnetic tunnel junctions.
Conclusion
Wei Guo's contributions to the field of magnetic tunnel junctions highlight his innovative spirit and dedication to advancing technology. His patent and career achievements reflect his expertise and commitment to research and development in this critical area.