Wayne R Poff

Title: Wayne R Poff: Innovator in Cathode Substrate Technology

Introduction

Wayne R Poff is a notable inventor based in Lancaster, PA (US). He has made significant contributions to the field of cathode substrate technology, holding a total of 2 patents. His innovative methods have improved the efficiency and effectiveness of etching processes in metal parts.

Latest Patents

Wayne R Poff's latest patents include a method for selectively etching integral cathode substrates and supports. This method involves placing formed metal parts on a pin holder, masking selected surface portions, etching the unmasked areas, and then removing the mask. The improvement in this method lies in the arrangement of parts in a staggered array, which increases the turbulence of the etchant during the etching step. This turbulence enhances the rate and uniformity of the etching process by providing additional oxygen. Another patent by Poff also focuses on the selective etching of integral cathode substrates, where the masking step is conducted by pressing surface portions of an etch-resistant, compressible sheet against the selected surface portions of the part.

Career Highlights

Throughout his career, Wayne R Poff has worked with prominent companies such as RCA Licensing Corporation and RCA Inc. His experience in these organizations has contributed to his expertise in the field of etching technology and substrate preparation.

Collaborations

Wayne has collaborated with notable individuals in his field, including Donald W Bartch and Samuel B Deal. These collaborations have likely enriched his work and led to further advancements in his inventions.

Conclusion

Wayne R Poff's contributions to the field of cathode substrate technology through his innovative patents demonstrate his commitment to improving manufacturing processes. His work continues to influence the industry and showcases the importance of innovation in technology.