Wanjun Chen

Title: Wanjun Chen: Innovator in Integrated HEMT and Lateral Field-Effect Rectifier Technologies

Introduction: Wanjun Chen is a prominent inventor based in Hong Kong, CN. He has made significant contributions to the field of semiconductor technology, particularly in the development of integrated high-efficiency devices. His work focuses on enhancing the performance and efficiency of electronic components.

Latest Patents: Wanjun Chen holds a patent for "Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems." This patent describes integrated high-efficiency lateral field-effect rectifier and HEMT devices made from GaN or analogous semiconductor materials. The invention includes methods for manufacturing these devices and systems that incorporate them. The lateral field-effect rectifier features an anode with a shorted ohmic contact and a Schottky contact, while the HEMT has a gate with a Schottky contact. Notably, two fluorine ion-containing regions are formed directly underneath both Schottky contacts, which help to pinch off the electron gas channels at the hetero-interface between the epitaxial layers.

Career Highlights: Wanjun Chen is affiliated with The Hong Kong University of Science and Technology, where he conducts research and development in semiconductor technologies. His innovative work has positioned him as a key figure in the advancement of high-efficiency electronic devices.

Collaborations: Wanjun Chen has collaborated with notable colleagues, including Jing Chen and Chunhua Zhou. Their combined expertise contributes to the ongoing research and development efforts in the field of semiconductor technology.

Conclusion: Wanjun Chen's contributions to integrated HEMT and lateral field-effect rectifier technologies highlight his role as an influential inventor in the semiconductor industry. His innovative patent and collaborative efforts continue to drive advancements in electronic components.