Walter R Runyan

Title: Walter R. Runyan: Innovator in Semiconductor Technology

Introduction

Walter R. Runyan is a notable inventor based in Dallas, Texas, recognized for his contributions to semiconductor technology. He holds a patent that showcases his innovative approach to improving semiconductor circuits. His work has significant implications for the efficiency and reliability of electronic devices.

Latest Patents

Walter R. Runyan's most recent patent is titled "Discretionary gettering of semiconductor circuits." This patent describes a semiconductor wafer that is patterned to include gettering areas selectively positioned near devices that require gettering. The gettering areas consist of germanium-doped silicon with a germanium concentration of approximately 1.5%-2.0%. The introduction of germanium creates a lattice mismatch between the substrate and an epitaxial layer, which is sufficient to produce defects capable of gettering contaminants. The formation of these gettering areas can be achieved through various techniques, including selective deposition, selective etching, ion-implantation, or selective diffusion.

Career Highlights

Walter R. Runyan has made significant strides in his career, particularly through his work at Texas Instruments Corporation. His innovative ideas and patents have contributed to advancements in semiconductor technology, enhancing the performance of electronic devices.

Collaborations

Walter has collaborated with esteemed colleagues, including Kenneth E. Bean and Satwinder S. Malhi. Their combined expertise has fostered a productive environment for innovation and development in the field of semiconductor technology.

Conclusion

Walter R. Runyan's contributions to semiconductor technology through his patent and work at Texas Instruments Corporation highlight his role as an influential inventor. His innovative approaches continue to shape the future of electronic devices.