Walter Hansch

Title: Walter Hansch: Innovator in Semiconductor Technology

Introduction

Walter Hansch is a notable inventor based in Tegernbach, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent. His work has implications for the efficiency and functionality of semiconductor components.

Latest Patents

Walter Hansch holds a patent for a field-effect-controlled semiconductor component and a method of fabricating a doping layer in a vertically configured semiconductor component. This invention features a semiconductor component that includes at least one source zone and one drain zone of a first conductivity type, along with a body zone of a second conductivity type positioned between them. The design incorporates at least two regions of the second conductivity type within a channel zone, each with different doping concentrations. This configuration results in a threshold voltage greater than zero and reduces the on-resistance compared to traditional designs.

Career Highlights

Walter Hansch is associated with Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has allowed him to be at the forefront of technological advancements in the semiconductor industry. His innovative approach has contributed to the development of more efficient semiconductor devices.

Collaborations

Walter has collaborated with notable colleagues such as Ignaz Eisele and Christoph Fink. Their combined expertise has fostered an environment of innovation and progress within their projects.

Conclusion

Walter Hansch's contributions to semiconductor technology through his patent and work at Infineon Technologies AG highlight his role as a key innovator in the field. His advancements continue to influence the efficiency of semiconductor components, showcasing the importance of innovation in technology.